| PART |
Description |
Maker |
| IRKD166 IRKC166 IRKC196-04 IRKC196-08 IRKC196-12 I |
1400V Single Diode in a INT-A-Pak package
1200V Single Diode in a INT-A-Pak package
1200V Doubler in a INT-A-Pak package
1600V Common Anode in a INT-A-Pak package
1600V Single Diode in a INT-A-Pak package
1600V Doubler in a INT-A-Pak package
1600V Common Cathode in a INT-A-Pak package
STANDARD RECOVERY DIODES
800V Doubler in a INT-A-Pak package
800V Single Diode in a INT-A-Pak package
1200V Common Anode in a INT-A-Pak package
800V Common Cathode in a INT-A-Pak package
1400V Doubler in a INT-A-Pak package
1400V Common Anode in a INT-A-Pak package 1400V共阳极的相依 Pak封装
1400V Common Cathode in a INT-A-Pak package 1400V共阴极的相依 Pak封装
NEW INT-A-pak Power Modules 新国甲柏电源模块
1200V Common Cathode in a INT-A-Pak package 1200伏共阴极的相依甲- Pak封装
800V Common Anode in a INT-A-Pak package 800V的共阳极的相依甲- Pak封装
230 A, 1200 V, SILICON, RECTIFIER DIODE
|
IRF[International Rectifier]
International Rectifier, Corp.
VISHAY SEMICONDUCTORS
|
| MIP0221SY MIP0222SY MIP0223SY MIP0224SY MIP0225SY |
Silicon MOS IC
ISOLATOR, INT'LOCK 25A 3 POLEISOLATOR, INT'LOCK 25A 3 POLE; Poles, No. of:3; Current rating:25A; Approval Bodies:UL, CSA; IP rating:IP55; Power, switching AC3 max:13kW
|
PANASONIC[Panasonic Semiconductor]
PANASONIC CORP
|
| TC58DVM72A1F TC58DVM72A1FT00 TC58DVM72F1FT00 TC58D |
Flash - NAND
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| 110MT160K 110MT160KB 110MT160MT 90MT80KB 110MT100K |
3 PHASE, 110 A, 1400 V, SILICON, BRIDGE RECTIFIER DIODE
1200V 3 Phase Bridge in a INT-A-Pak package
1600V 3 Phase Bridge in a INT-A-Pak package
1000V 3 Phase Bridge in a INT-A-Pak package
1400V 3 Phase Bridge in a INT-A-Pak package
800V 3 Phase Bridge in a INT-A-Pak package
THREE PHASE BRIDGE
CAP 3300PF 100V 100V X7R RAD.20 .20X.20 BULK P-MIL-PRF-39014 三相桥式
3 PHASE, 90 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| HY27UF081G2A HY27UF161G2A-TPCS HY27UF161G2A-TPCB |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
64M X 16 FLASH 3.3V PROM, 25000 ns, PDSO48
|
HYNIX SEMICONDUCTOR INC
|
| 54MT80KB 54MT100KB 54MT120KB 54MT140KB 54MT160KB 1 |
THREE PHASE AC SWITCH
800V 3 Phase Bridge in a INT-A-Pak package
1000V 3 Phase Bridge in a INT-A-Pak package
1200V 3 Phase Bridge in a INT-A-Pak package
1400V 3 Phase Bridge in a INT-A-Pak package
1600V 3 Phase Bridge in a INT-A-Pak package
|
IRF[International Rectifier]
|
| TH58NS100DC |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )
|
Toshiba Semiconductor
|
| K9F1608W0A- K9F1608W0A-TCB0 K9F1608W0A-TIB0 K9F1G0 |
-2M x 8 Bit NAND Flash Memory
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| LPC3240FET296 |
ARM926EJ-S with 256 kB SRAM, USB High-speed OTG, SD-MMC, NAND flash controller, Ethernet 32-BIT, FLASH, 266 MHz, RISC MICROCONTROLLER, PBGA296
|
NXP Semiconductors N.V.
|
| TC58FVT160AXB-70 TC58FVB160AXB-70 TC58FVB160AFT-70 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
16-MBIT (2M 8 BITS / 1M 16 BITS) CMOS FLASH MEMORY
16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba Corporation
|
